Massive Batch Selective Si and SiGe Epitaxial Deposition

Abstract

Selective and nonselective growth of Si and SiGe was performed in a large batch vertical LPCVD furnace on 200mm substrates. Excellent atomic crystal quality, as demonstrated by RHEED, and low defect epitaxy were observed using a wet HF-last process to remove native oxide followed by a H2 bake. Although an oxygen free interface, measured by SIMS, was achieved with a H2 bake temperature of 800C, a temperature of 900C was required in order to remove interfacial features detectable by laser surface scan. Selective Si deposition rates of 10nm/min., using SiH2Cl2/H2 chemistry have been demonstrated at a temperature of 850C and a pressure of 500Pa.