Author:
Elbaz Anas,El Kurdi Moustafa,Prost Mathias,Ghrib Abdelhamid,Sauvage Sébastien,Checoury Xavier,Aniel Frederic,Zerounian Nicolas,Picardi Gennaro,Ossikovski Razvigor,Beaudoin Gregoire,Sagnes Isabelle,Boeuf Frédéric,Boucaud Philippe
Abstract
We show that direct band gap germanium can be obtained with external silicon nitride stressor layers. The cross-over from indirect to direct band gap is found to occur for an equivalent 1.67% biaxial tensile strain. Both whispering gallery modes and quasi-radial modes are observed with tensile-strained Ge microdisks. Quality factors up to 7100 have been measured around 2 µm wavelength. We demonstrate that circular Bragg reflectors can significantly enhance the quality factors of quasi-radial modes in strained germanium microdisks.
Publisher
The Electrochemical Society
Cited by
1 articles.
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