Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector-Reference-Cited by-同舟云学术

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Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector

Published:2007 Issue:1 Volume:154 Page:H13
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Guo Der-Feng,Yen Chih-Hung,Tsai Jung-Hui,Lour Wen-Shiung,Liu Wen-Chau

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Characterization of the Switching Parameters in the Dual-Channel Double Heterostructure Optoelectronic Switch

2. Derivation of the switch-on parameters in the dual channel double heterostructure optoelectronic switch

3. A Schottky-contact triangular-barrier optoelectronic switch (STOS)

4. InP/InGaAsP double-heterostructure optoelectronic switch

5. GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunction phototransistor vertically integrated with a resonant cavity

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