A High-Quality Spacer Oxide Formation for 28nm Technology Node and Beyond
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Published:2012-03-16
Issue:1
Volume:44
Page:407-410
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Zhang Bin,Xiang Yang Hui,Deng Hao,Guo Shibi,Zhang Beichao
Abstract
In this paper we present a new approach to fabricate spacer oxide for 28nm and beyond CMOS technology. The main advantage of this approach is that it allows a further downscaling of transistor's gate length while maintaining high qualities, such as low thermal budget, excellent conformality, and small pattern loading effect (referring to equal thickness deposition in open and dense areas within an array structure), etc.
Publisher
The Electrochemical Society