Hafnium Aluminates Deposited by Atomic Layer Deposition: Structural Characterization by X-ray Spectroscopy

Abstract

Hafnium aluminates thin films deposited (50% Hf) by atomic layer deposition upon silicon substrate and then annealed by two different methods into two different environments. Their structural and chemical behaviors after thermal treatment were investigated using X-ray spectroscopy. For thin films annealed at 1000°C for 60 s in N2, phase separation take place, promoting the formation of HfO2 spheroidal crystalline nanoparticles embedded in Al2.4 O3.6, while in that annealed by laser HfO2 remains in its amorphous phase, but the aluminum oxide crystallizes in Al2.4O3.6 forming spheroidal nanoparticles.