Author:
Tsuneishi Kana,Chen Jiangning,Kakushima Kuniyuki,Ahmet Parhat,Kataoka Yoshinori,Nishiyama Akira,Sugii Nobuyuki,Tsutsui Kazuo,Natori Kenji,Hatorri Takeo,Iwai H.
Abstract
Current-voltage characteristics of Ti and TiSi2 electrodes on AlGaN/GaN structures have been characterized. Ti electrode has revealed annealing temperature dependent properties presumably due to excess reaction with AlGaN layer. Owing to inert properties of TiSi2, stable current-voltage characteristics have been obtained.
Publisher
The Electrochemical Society