Merits of Buried Grid Technology for SiC JBS Diodes

Abstract

SiC Schottky diodes for 250C operation have been developed and analysed. 2A and 10A, 1700V diodes use an implanted buried grid technology with epitaxial overgrowth. A dense grid from 1.5 to 6 µm have been investigated. 10A buried grid JBS diodes have leakage current at least three orders of magnitude lower compared to the commercial devices. The leakage current at 250C is comparable to that of the commercial devices at 175C. The analysis is supported by simulations.