Elimination of End‐of‐Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation-Reference-Cited by-同舟云学术

Elimination of End‐of‐Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation

Published:1989-02-01 Issue:2 Volume:136 Page:466-471
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Wen D. ‐S.¹²¹³,Smith P.¹²¹³,Osburn C. M.¹²¹³,Rozgonyi G. A.¹²¹³

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911

2. Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709‐2889

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7916

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2096656/pdf

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