Annealing of High Dose Sb‐Implanted Single‐Crystal Silicon-Reference-Cited by-同舟云学术

Annealing of High Dose Sb‐Implanted Single‐Crystal Silicon

Published:1985-12-01 Issue:12 Volume:132 Page:3048-3052
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Guerrero E.¹²³,Pötzl H.¹²³,Stingeder G.¹²³,Grasserbauer M.¹²³,Piplitz K.¹²³,Chu W. K.¹²³

Affiliation:

1. Department of Physical Electronics, Institute for General Electrical Engineering and Electronics, Technical University Vienna, and Ludwig Boltzmann‐Institute for Solid State Physics, Vienna, Austria

2. Institute for Analytical Chemistry, Technical University Vienna, Vienna, Austria

3. Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27514

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2113720/pdf

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