The High Performance Nanorod Pd/WO3/Silicon Carbide/Silicon (P-I-N) Diode for Carbon Monoxide Gas Sensing Operation

Abstract

The nanorod Pd/WO3/SiC/Si p-i-n diode prepared on p+ type (100) Si substrate for carbon monoxide (CO) sensing applications was studied. The SiC material was used to enhance operating temperature, and the nanorod structure was designed to improve sensing performance of the device. The developed p-i-n diode exhibited a high relative response ratio of ~445% to 100 ppm CO ambient under condition of 300oC and -3V bias. The response ratio was better than the reported WO3 based resistive type CO sensors of 15 % and 8 %, respectively on Si and Al2O3 substrates. Thus, the Pd/WO3/SiC/Si p-i-n diode had the potential to develop a low cost high performance CO sensor.