Author:
Merckling Clement,Liu Ziyang,Hsu Mark,Hasan Samiul,Jiang Sijia,El Kazzi Salim,Boccardi Guillaume,Waldron Niamh,Wang Zhechao,Tian Bin,Pantouvaki Marianna,Van Campenhout Joris,Collaert Nadine,Heyns Marc,Van Thourhout Dries,Vandervorst Wilfried,Thean Aaron
Abstract
This review paper presents the challenges for the monolithic integration on silicon substrate by heteroepitaxy of III-V semiconductors selective area growth as well as epitaxial functional oxides. The heteroepitaxy of these materials on a common Si platform would allow the integration of new functionalities and advanced devices in both electronic and photonic areas.
Publisher
The Electrochemical Society