(Invited) Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with a Silicon Nanolayer

Abstract

Electroluminescence characteristics of metal-oxide-semiconductor tunnel diodes with a silicon nano-layer on silicon-on-insulator substrates have been studied. Peaks in the spectrum from the diode have been observed at ~1030 nm (~1.20 eV), ~950 nm (~1.31 eV), ~910 nm (~1.36 eV) and ~620 nm (~2.00 eV). It is suggested that the electroluminescence at ~620 nm is due to transitions between ultrathin silicon subbands.