Ultra Shallow Junction Formation Using Diffusion from Silicides: III . Diffusion into Silicon, Thermal Stability of Silicides, and Junction Integrity-Reference-Cited by-同舟云学术

Ultra Shallow Junction Formation Using Diffusion from Silicides: III . Diffusion into Silicon, Thermal Stability of Silicides, and Junction Integrity

Published:1992-01-01 Issue:1 Volume:139 Page:211-218
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Jiang H.¹²³,Osburn C. M.¹⁴,Xiao Z. ‐G.⁵,McGuire G.⁴,Rozgonyi G. A.⁵

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911

2. The Royal Institute of Technology, Electrum, Solid State Electronics, S‐16428, Kista, Sweden

3. ELLEMTEL Telecommunications Systems Laboratories, S‐12525, Älvsjö, Sweden

4. MCNC, Research Triangle Park, North Carolina 27709

5. Department of Materials Science, North Carolina State University, Raleigh, North Carolina 27695

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2069172/pdf

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