Author:
Chen H.-W.,Huang T.-Y.,Landheer D.,Wu X.,Moisa S.,Sproule G. I.,Kim J. K.,Lennard W. N.,Chao T.-S.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Thermodynamic stability of binary oxides in contact with silicon
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
5. W.-J. Qi, R. Nieh, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, J. C. Lee, V. Kaushik, B. Y. Nguyen, L. Prabhu, K. Eisenbeiser, and J. Finder,Technical Digest for VLSI Symposium, p. 40 (2000).
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献