A Comparison of Avalanche Injection of Holes and Total Dose Radiation Effects in RadFETs

Abstract

Radiation sensitive Field Effected Transistors (RadFETs) have been widely used as dosimeters to detect the Total Dose Radiation Effects (TDRE). Because ionizing radiation for testing RadFET samples is costly and inconvenient, Avalanche Injection of Holes (AIH) was introduced to simulate or substitute the radiation methods to evaluate the quality of RadFETs in this paper. Several kinds of dielectric layers of RadFETs were fabricated and the comparison of AIH and TDRE was investigated. It was found that AIH can cause the similar △VTH and annealing change trends with TDRE to predict the radiation characteristics of RadFETs.