Author:
Ryoo Jin-Yong,Sung Suk-Kang,Yim Yong-Sik,Song Jun-Eui,Shin Wang-Chul,Song Jai-Hyuk,Song Du-Heon,Choi Jeong-Hyuk,Roh Yonghan
Abstract
This paper describes the influence of water-related species contained in intermetal dielectric layer on the interpoly dielectric properties of nonvolatile memory devices. P-TEOS layer used as an intermetal dielectric enhances degradation of interpoly dielectric of nonvolatile memory devices due to the water-related components contained in the layer.
Publisher
The Electrochemical Society