Impact of STI Gap-Fill Process Deposited by HDP-CVD in Flash Memory
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Published:2013-08-31
Issue:5
Volume:58
Page:75-79
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Park Hyoung-sun,Kim Ki-yong,Hong Ok-cheon,Kim Hong-sig,Lee Haebum,Lee Kyu-pil,Cho In-soo,Choi Byoung-deog
Abstract
This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.
Publisher
The Electrochemical Society