Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications
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Published:2013-08-31
Issue:5
Volume:58
Page:81-90
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Kobayashi Kiyoteru,Naito Shinji,Nakiri Shuichi,Ito Yoshina
Abstract
We investigated the charge trapping property of SiOx-SiCN-SiO2 stacked films formed on silicon substrates. The stacked films captured charges and the trapped charge density was found to be roughly equal to that in a conventional SiOx-SiNX-SiO2 stacked film. On the other hand, the flat-band voltage shift induced by the trapped charge in the metal-SiOx-SiCN-SiO2-silicon capacitor was greater than that in the metal-SiOx-SiNX-SiO2-silicon capacitor. The larger flat-band voltage shift is attributed to the lower dielectric constant of SiCN film. The programming and erasing characteristics of metal-SiOx-SiCN-SiO2-silicon structures were also investigated.
Publisher
The Electrochemical Society
Cited by
1 articles.
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