High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment-Reference-Cited by-同舟云学术

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High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment

Published:2011-01-01 Issue:2 Volume:15 Page:H20-H22
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochemical and Solid-State Letters

Author:

Chiu H.-C.,Wang H.-C.,Lin C.-K.,Kao H.-L.,Fu J. S.,Hsueh K.-P.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference9 articles.

1. W. Saito, I. Omura, T. Domon, and K. Tsuda , IEEE Proc. Compound Semiconductor IC Symp. , 253 (2006).

2. M. L3ito and T. Ogura , Proc. Int. Power Electron Conference , 1184 (2005).

3. Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process

4. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors

5. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-aligned photolithography for the fabrication of flexible transparent high-voltage thin film transistors, diodes and inverters;Microelectronic Engineering;2018-11

2. Effect of Indium doping on the electrical properties of solution-processed Mg0.2Zn0.8O thin film transistors;Electronic Materials Letters;2017-02-02

3. Effect of Cu-doping on the microstructural and optical properties of Mg0.2Zn0.8O thin films prepared by sol–gel spin coating;Thin Solid Films;2013-11

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