Optical and Luminescence Properties of Electrosynthesized ZnSe Thin Films

Abstract

Optical constants of ZnSe thin films for various deposition potentials were determined in the spectral range 400 nm to 1200 nm using the optical absorption and transmittance measurements. The Tauc's plot were drawn to determine the energy band gap values of the deposited films and are estimated to be in the range between 2.52 eV and 2.61 eV respectively. Their optical constants like refractive index (n), dielectric constants (ε), optical conductivity (σ), average excitation energy (E0), oscillator strength (Ed), effective mass (m*), plasma frequency (ωp), static dielectric constant (ε∞) and carrier concentration (N) were estimated and reported. The room temperature photo luminescence studies were also performed. The near band edge luminescence emission has been observed and reported.