Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory
Author:
Funder
National Science and Technology Major Project of China
National Key Research and Development Program of China
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Feasibility of InxGa1–xAs High Mobility Channel for 3-D NAND Memory
2. Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling
3. Improvement of Poly-Si Channel Vertical Charge Trapping NAND Devices Characteristics by High Pressure D2/H2 Annealing.
4. Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels
5. Device considerations for high density and highly reliable 3D NAND flash cell in near future
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