Formation of Etch Pits on Germanium Surfaces Loaded with Reduced Graphene Oxide in Water-Reference-Cited by-同舟云学术

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Formation of Etch Pits on Germanium Surfaces Loaded with Reduced Graphene Oxide in Water

Published:2017-04-25 Issue:4 Volume:77 Page:127-133
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Nakade Kazuki,Hirano Tomoki,Li Shaoxian,Saito Yusuke,Mori Daichi,Morita Mizuho,Kawai Kentaro,Arima Kenta

Publisher

The Electrochemical Society

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors;Nanoscale;2024

2. Producing Microscale Ge Textures via Titanium Nitride‐ and Nickel‐Assisted Chemical Etching with CMOS‐Compatibility;Advanced Materials Interfaces;2021-09-27

3. Catalytic Properties of Chemically Modified Graphene Sheets to Enhance Etching of Ge Surface in Water;The Journal of Physical Chemistry C;2020-02-28

4. Chemical etching of a semiconductor surface assisted by single sheets of reduced graphene oxide;Carbon;2018-02

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