Metal CMP Optimization Based on Chemically Formed Thin Film Analysis

Abstract

The conventional demands for development in semiconductor industry are changing as the Moore's Law is approaching to its limits. This paper demonstrates a theoretical optimization approach for the planarization of metal films by Chemical Mechanical Polishing (CMP) process. Optimal removal rate and a smooth surface finish post CMP can be achieved by the combined effect of the chemical and mechanical components of the process. Metal CMP necessitates a protective oxide film formation in the presence of surface active agents, corrosives, pH regulators etc' to achieve global planarization. Formation and mechanical properties of the chemically modified films determine the stresses develop in the film structure delineating the stability of the chemically altered films on the surface of the metal wafer. The balance between the stresses built in the film structure versus the mechanical actions provided during the process can be used to optimize the process variables and furthermore help define new planarization techniques for the next generation microelectronic device manufacturing which is expected to deal with atomic level structures.