Author:
Tong Xiaodong,Liang QingQing,Zhong Huicai,Zhu Huilong,Chen Dapeng,Ye Tianchun
Abstract
A new SRAM structure using 2-port PNPN diodes as memory cells is proposed in this article. The electrical characteristics of this memory cell is analyzed and then optimized to meet design requirements. Device fabrication using a simple process flow is conducted. The experimental result and further mixed-mode simulations proved that this diode is feasible for SRAM circuit in advanced VLSI applications.
Publisher
The Electrochemical Society
Cited by
1 articles.
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