Realization of a Multilayered Nano-Crystalline Silicon Structure by a Novel Low Temperature Process Suitable for Silicon-Based Light Emitting Diodes

Abstract

A plasma enhanced chemical vapor deposition (PECVD) of amorphous-Si followed by in-situ crystallization has been applied to realize nano-scale crystal grains embedded in amorphous medium. Removal of extra amorphous Si layer is achieved using a sequential reactive ion etching process while the nano-crystalline grains are preserved. The process is carried out all at temperatures below 350o C which is fully compatible with soda-lime glass substrates. Photoluminescence analysis indicates the light-emitting behavior of the processed layer at a wavelength around 550 nm. A correspondence between the photoluminescence peak position and silicon grain size is observed using SEM. Multilayered structures have been employed to realize light emitting diodes on glass substrates. The electroluminescence spectrum of the device has been investigated.