(Invited) Large Mobility Modulation Due to Discrete Impurities in Nanowires

Abstract

The impurity-limited resistance in quasi-one dimensional nanowire structures is studied under the framework of the Landauer and the Lippmann-Schwinger theories. The charge polarity dependence of the impurity-limited resistance (mobility) under localized impurities with short-range scattering potential is theoretically clarified. We show that the impurity-limited resistance (mobility) could be modulated over three orders of magnitude by varying the axial separation of the ionized impurities, provided that the charge polarity of the impurities is opposite to that of carriers. The present results are consistent with recent experimental observations that the electron mobility in Junctionless-FETs is enhanced as the donor concentration becomes large, contrary to the usual trends found from the semi-classical calculations.