(Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications
Author:
Publisher
The Electrochemical Society
Link
https://iopscience.iop.org/article/10.1149/10404.0017ecst/pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition;Japanese Journal of Applied Physics;2024-01-10
2. Reservoir Computing System With HZO/Si FeFETs in Parallel Configuration: Experimental Demonstration of Speech Classification;IEEE Transactions on Electron Devices;2023-11
3. Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization;APL Materials;2023-10-01
4. Reservoir Computing Utilizing Ferroelectric-Gate-Insulator FETs and Capacitors;2023 International Conference on IC Design and Technology (ICICDT);2023-09-25
5. The ferroelectric orthorhombic phase formation of Hf0.5Zr0.5O2 thin films on (−201) β-Ga2O3 substrate by atomic layer deposition;Japanese Journal of Applied Physics;2023-08-09
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