(Invited) III-Nitride Heterojunction Field-Effect Transistors and Heterojunction Bipolar Transistors for Next-Generation Power Electronics

Abstract

This paper will discuss recent progress in technology development for two key III-Nitride (III-N) transistor technologies: high-voltage AlGaN/GaN heterojunction field-effect transistors (HFETs) and GaN/InGaN RF heterojunction bipolar transistors (HBTs).