The Effects of Various Gate Oxidation Conditions on Intrinsic and Radiation‐Induced Extrinsic Charged Defects and Neutral Electron Traps-Reference-Cited by-同舟云学术

The Effects of Various Gate Oxidation Conditions on Intrinsic and Radiation‐Induced Extrinsic Charged Defects and Neutral Electron Traps

Published:1990-11-01 Issue:11 Volume:137 Page:3596-3601
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Walters M.¹²,Reisman A.¹²

Affiliation:

1. Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709

2. North Carolina State University, Deparment of Electrical and Computer Engineering, Raleigh, North Carolina 27695, and Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086274/pdf

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