Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate-Reference-Cited by-同舟云学术

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Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate

Published:2014-07-01 Issue:9 Volume:3 Page:R45-R47
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Chen C.-C.,Yap C.-Y.,Hsu W.-Y.,Kuo C.-T.,Tsai T.-L.,Chu J.-Y.,Sermon Wu Y.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the Performance Improvement of GaN-Based Ultraviolet Light-Emitting Diode Chips with Magnetron-Sputtered AlN Nucleation Layers;Integrated Ferroelectrics;2023-09-02

2. Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers;Materials;2020-09-05

3. In-situ mapping of electroluminescent enhancement of light-emitting diodes grown on patterned sapphire substrates;Journal of Applied Physics;2017-02-07

4. Solution-Based High-Density Arrays of Dielectric Microsphere Structures for Improved Crystal Quality of III-Nitride Layers on Si Substrates;Journal of Nanomaterials;2015

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