The Versatile Use of SiGe for High-Performance Devices

Abstract

Apart from the widely used bandgap engineering in the base of Hetero-junction Bipolar Transistors (HBTs) and strain engineering in CMOS SiGe has many other possible application in Si technology. This paper will discuss several examples, both within and outside (Bi)CMOS technology. For instance, SiGe bandgap engineering can be used in power diodes. Other possibilities make use of the fact that SiGe can be etched selectively towards Si. This allows, for example, creation of cavities in the silicon substrate. These can be used for, e.g., reduction of parasitic capacitance, device isolation, or electric field shaping.