Author:
Lysaght Patrick,Barnett Joel,Woicik Joseph C.,Foran Brendan,Bersuker Gennadi,Lee Byoung Hun
Abstract
HfO2 gate dielectric thin films have been exposed to anneal processing in NH3 and N2 ambient in order to decouple the influence of N incorporation from that of the thermal cycle alone. We report on the effectiveness of NH3 processing to introduce N into the dielectric film system and characterize the local coordination and crystallization kinetics that give rise to the resultant high-k film microstructure as determined from a variety of high resolution spectroscopic and imaging analysis techniques.
Publisher
The Electrochemical Society
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献