Improved Process Stability on an Extremely Thin Amorphous/Crystalline Silicon Interface Passivation Layer by Using Predeposition on the Chamber Wall
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology
2. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing
3. 20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation
4. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer
5. Optimisation of Intrinsic a-Si:H Passivation Layers in Crystalline-amorphous Silicon Heterojunction Solar Cells
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1. Optimization of Silicon Heterojunction Interface Passivation on p‐ and n‐Type Wafers Using Optical Emission Spectroscopy;physica status solidi (a);2022-01-14
2. Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films;Coatings;2019-05-06
3. Large-scale data analysis of PECVD amorphous silicon interface passivation layer via the optical emission spectra for parameterized PCA;The International Journal of Advanced Manufacturing Technology;2018-10-31
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