Silicon Gate Oxide Thickness Uniformity during HCl Oxidation-Reference-Cited by-同舟云学术

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Silicon Gate Oxide Thickness Uniformity during HCl Oxidation

Published:1991-01-01 Issue:1 Volume:138 Page:268-277
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Osburn C. M.¹²³,Reisman A.¹²³,Stinson M.¹²³,Lipkin L.¹²³,Berger H.¹²³,Tollin C.¹²³

Affiliation:

1. MCNC, Research Triangle Park, North Carolina 27709 and Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27601

2. University of North Carolina, Chapel Hill, North Carolina 27514

3. Airco Industrial Gases, Murray Hill, New Jersey 07974

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2085554/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Hot Corrosion of Fe-20Cr Coated with A Fused (Na,K)2SO4 Film By Electrochemical Impedance Spectroscopy;High Temperature Materials and Processes;2007-01

2. Long-Term Hot Corrosion Behavior of Ni-Based Superalloy M38G Using Electrochemical Impedance Spectroscopy;High Temperature Materials and Processes;2006-08

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