Low Pressure Chemical Vapor Deposition of Silicon Carbide from Ditertiarybutylsilane-Reference-Cited by-同舟云学术

Low Pressure Chemical Vapor Deposition of Silicon Carbide from Ditertiarybutylsilane

Published:1993-10-01 Issue:10 Volume:140 Page:3001-3007
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Grow J. M.¹²,Levy R. A.¹²,Bhaskaran M.¹²,Boeglin H. J.¹²,Shalvoy R.¹²

Affiliation:

1. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102

2. Olin Chemicals Research, Cheshire, Connecticut 06410

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2220947/pdf

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