Photocurrent of SiGe/Si Strained Multiple Quantum-Wells Grown by UHV-CVD
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Published:2008-10-03
Issue:10
Volume:16
Page:875-880
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Kim Taek Sung,Choi Sang-Sik,Jeong Tae Soo,Kang Sukill,Shim Kyu-Hwan
Abstract
The optical property was studied for the Si0.8Ge0.2/Si strained multiple quantum-well (MQW) structure grown by using ultra high vacuum chemical vapor deposition (UHV-CVD). The structural properties of the Si0.8Ge0.2/Si strained MQW were investigated using high-resolution X-ray diffraction (HR-XRD). The photocurrent spectrum of a Si0.8Ge0.2/Si strained MQW was measured at the room-temperature and the liquid-nitrogen temperature. For Si0.8Ge0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (e-lh) fundamental excitionic transitions.
Publisher
The Electrochemical Society