Variation of Size and Density of Pyramidal Hillock during Epitaxial Growth of Silicon Using Dichlorosilane Gas-Reference-Cited by-同舟云学术

Variation of Size and Density of Pyramidal Hillock during Epitaxial Growth of Silicon Using Dichlorosilane Gas

Published:1995-11-01 Issue:11 Volume:142 Page:3956-3961
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Mazumder Motaharul K.¹²³,Mashiko Y.¹²³,Koyama H.¹²³,Takakuwa Y.¹²³,Miyamoto N.¹²³

Affiliation:

1. ULSI Laboratory, Mitsubishi Electric Company, 4‐1 Mizuhara, Itami 664, Japan

2. Research Institute for Scientific Measurements, Tohoku University, 2‐1‐1 Katahira, Aoba‐ku, Sendai 980‐77, Japan

3. Research Institute of Electrical Communication, Tohoku University, 2‐1‐1 Katahira, Aoba‐ku, Sendai 980‐77, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2048441/pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination Activity of Crystal Defects in Epitaxially Grown Silicon Wafers for Highly Efficient Solar Cells;physica status solidi (a);2024-07-23

2. Correlation between micro-roughness, surface chemistry, and performance of crystalline Si/amorphous Si:H:Cl hetero-junction solar cells;Journal of Non-Crystalline Solids;2008-05

3. Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy;Japanese Journal of Applied Physics;2007-02-08

4. Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface;Journal of Applied Physics;2007-02

5. Research status in thin-film crystalline Si solar cells;Current Applied Physics;2001-12