(Invited) ALD High-k as a Common Gate Stack Solution for Nanoelectronics

Abstract

The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new materials, innovative structures, and even novel device concepts. All the emergent channel materials need perfect top-gate dielectric stacks in order to sustain their potential device performance. ALD high-k as a common gate stack solution finds itself very successfully integrated with these novel channel materials such as Ge, III-V, different nanowires, carbon nanotubes (CNTs), graphene and newly discovered all oxide electronic materials.