Microwave Electrochemical Characterization of the Si/Isolator Interface

Abstract

In the present work measurements, combining classic impedance potentiostatic methods with conductance measurements in the microwave frequency range, are applied to semiconductor/insulator heterojunctions in an electrochemical cell configuration. The Si/a-SiNx:H interface has been studied by these methods in different electronic regimes. Quasi-stationary and transient photo-conductance experiments in combination with photocurrent measurements have been described as function of the applied potential. Moreover, potential modulated conductance measurements in combination with impedance measurements have been performed to identify flatband and so the space charge regimes of this heterojunction. Leading to the conclusion that the fixed charge in a-SiNx:H is responsible for the Si wafer passivation but it is shown that the electronic configuration of this interface present certain instabilities.