Boron Transport Through Surface Channel pMOS Using W-poly Metal Gate Electrode-Reference-Cited by-同舟云学术

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Boron Transport Through Surface Channel pMOS Using W-poly Metal Gate Electrode

Published:2002 Issue:8 Volume:149 Page:G441
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Park Sang-Wook,Kim Dong-Jin,Lee Chan-Ho,Lee Seung-Cheol,Kwak Noh-Yeal,Shin Seung-Woo,Park Jeong-Hwan,Suh Min-Suk,Kong Young-Taek,Dong Cha-Deok,Yang Hong-Seon

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Design tradeoffs between surface and buried-channel FET's

2. Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal

3. Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation

4. Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi Gate;IEEE Electron Device Letters;2007-01

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