Author:
Choi Eun-Suck,Yoon Soon-Gil
Abstract
(
Ba
,
Sr
)
RuO
3
(BSR) electrodes were deposited onto Si(100) substrates by liquid delivery metallorganic chemical vapor deposition and investigated for stability under hydrogen forming condition. The BSR films showed structural and morphological stability in hydrogen forming gas (4%
H
2
/
balance
N
2
)
anneal up to
500
°
C
.
The abrupt increase of resistivity with increasing hydrogen anneal temperature was attributed to the oxygen loss in BSR films without phase change and was completely recovered by annealing at
700
°
C
in
O
2
ambient. The BSR electrodes, with structural and morphological stability in hydrogen forming gas anneal conditions at high temperature, are suitable for integration of high dielectric constant materials. © 2002 The Electrochemical Society. All rights reserved.
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Cited by
1 articles.
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