(Invited) In-situ Observation of Formation of Bonded Interface using MEMS-in-TEM at the Nanoscale
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Published:2013-03-15
Issue:7
Volume:50
Page:51-60
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Ishida Tadashi,Fujita Hiroyuki
Abstract
It is important to establish bonding technology to have strong bond between two wafers for future integrated device with high performance and multi functions. Direct bonding and eutectic bonding are the major techniques and are utilized for packaging and connection in commercial devices. However, the understandings of the mechanism of these techniques are not enough. Therefore, we establish a unique experimental setup combining micro-electro-mechanical systems (MEMS) of transmission electron microscope (TEM) in order to visualize the bonding interface at the nanoscale. In this paper, we introduce the in-situ observation of silicon-silicon and gold-gold interface for direct bonding, and that of gold-silicon interface for eutectic bonding at the nanoscale.
Publisher
The Electrochemical Society