Author:
Otsuka Shintaro,Shimizu Tomohiro,Shingubara Shoso,Iwata Nobuyuki,Watanabe Tadataka,Takano Yoshiki,Takase Kouichi
Abstract
The electric conduction mechanism of electrochemically treated anodic porous alumina (APA) resistance switching (RS) memory is investigated. The current-voltage characteristics of the APA were measured for both of high resistance state and low resistant state at room temperature. The conduction mechanism of a high resistance state can be explained by separating into three regions of Ohm's law, space charge limited current (SCLC), and Fowler-Nordheim (F-N) tunneling. It was suggested that the F-N tunneling decreases the reproducibility of switching voltages.
Publisher
The Electrochemical Society
Cited by
5 articles.
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