Excitation Photacapacitance Study of Ionized Levels in n‐Type GaAs Observed during Photoquenching-Reference-Cited by-同舟云学术

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Excitation Photacapacitance Study of Ionized Levels in n‐Type GaAs Observed during Photoquenching

Published:1998-08-01 Issue:8 Volume:145 Page:2892-2894
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nishizawa Jun‐ichi¹²,Oyama Yutaka¹³²

Affiliation:

1. Semiconductor Research Foundation, Semiconductor Research Institute, Sendai 980‐0862, Japan

2. Sendai Research Center, Telecommunications Advancement Organization, Sendai 980‐0868, Japan

3. Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Sendai 980‐0845, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838731/pdf

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