(Invited) Combinatorial Synthesis and Interface Analysis for Development of High Dielectric Constant Thin Films

Abstract

The development of high-dielectric constant film materials is essential for future active and passive nanoelectronics devices. By integrating combinatorial synthesis, high throughput material development, and interface analysis, we have developed a high-dielectric constant Bi-based relaxor ferroelectric film material, x[BaTiO3]–(1−x)[Bi(Mg2/3Nb1/3)O3] (BT–BMN), for film capacitors. To increase the dielectric constant, and its thermal stability, of the above relaxor ferroelectric films, a periodic Ta doping structure was introduced by combinatorial method. The periodic insertion of BT–BMN layers with a high Ta concentration eliminated the dielectric constant decrease and also the Bi segregation encountered in BT–BMN films under high-temperature conditions. Upon optimizing the BT/BMN ratio in the stack structure, the BT–BMN films exhibited a high dielectric constant (>500) and an excellent thermal stability, less than 8% in the temperature range from room temperature to 400 °C