PECVD Deposition of nc-Si, μc-Si, and a-Si of Different Isotopic Composition in Form of Films and Bulk Material from SiF4 Precursor
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Published:2009-09-25
Issue:8
Volume:25
Page:229-233
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Sennikov Petr,Golubev Sergey,Shashkin Vladimir,Pryakhin Dmitry,Andreev Boris,Drozdov Mikhail,Pohl Hans-Joachim
Abstract
The results on production of films and bulk silicon samples of different isotopic composition by PECVD method are reported. The samples are investigated by the methods of X-ray diffraction, Raman scattering, secondary-ion mass spectrometry, IR spectroscopy. The photoluminescence spectra are measured at room temperature. Depending upon experiment the phase composition of samples is represented by nano-, micro-crystalline and amorphous silicon.
Publisher
The Electrochemical Society