Large Area Flexible Electronics Fabricated Using Self-Aligned Imprint Lithography-Reference-Cited by-同舟云学术

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Large Area Flexible Electronics Fabricated Using Self-Aligned Imprint Lithography

Published:2019-12-19 Issue:1 Volume:8 Page:199-204
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Jackson W.,Almanza-Workman Marcia,Chaiken Alison,Garcia Robert,Jeans Albert,Kim Han-Jun,Kwon Ohseung,Luo Hao,Mei Ping,Perlov Craig,Taussig Carl,Shur Michael,Koudymov A.

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.2767308/pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A simple fabrication method of passive-matrix organic light-emitting diode display without a photolithography process;Solid-State Electronics;2023-10

2. A top-down fabrication process for a-IGZO thin film transistor and patterned organic light-emitting diode;Korean Journal of Chemical Engineering;2023-02-10

3. Photolithography-free fabrication of a-IGZO thin film transistor with interconnecting metal lines;Materials Science in Semiconductor Processing;2021-01

4. Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer;Applied Physics Letters;2018-04-09

5. A review of thin-film transistors/circuits fabrication with 3D self-aligned imprint lithography;Flexible and Printed Electronics;2017-03-01

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