Influence of Retarding Hydrogen Diffusion in Boron Phosphosilicate Glass on Annealing Damage of Metal‐Oxide Semiconductor Transistors
Author:
Affiliation:
1. Yamaha Corporation, Semiconductor Division, Hamamatsu 435-0038, Japan
2. Research Institute of Electrical Communication, Tohoku University, Aoba‐ku, Sendai 980-8577, Japan
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/1.1392051/pdf
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of nanoclusters through silver reduction in glasses: The model;Journal of Non-Crystalline Solids;2007-07
2. Formation of glass-metal metamaterials via reactive diffusion: a model;Metamaterials II;2007-05-04
3. Impurities in dielectrics and hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories;Applied Physics Letters;2001-09-24
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