Impact of Minorty Carrier Response on Characterization of Ge MIS Interface Traps

Abstract

The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS interfaces with various interface layers by the conductance method based on the conventional model including the only majority carrier response and a newly-proposed model including the both carrier responses with interface traps. The analysis by using the conventional model leads to the inappropriate results of the Ge MIS interface properties near room temperature. On the other hand, the proposed model can accurately characterize ones. As a result, the electron capture cross-sections hardly depend on the energy in all samples as similar with those of Si MOS interface traps. This result indicates that the similar defects to a Si MOS interface are formed at the Ge MIS interfaces. Furthermore, the magnitudes of the cross-sections for each sample depend on the oxygen or nitrogen contents of the interface layers, suggesting that the different defect structures exist.