Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si layers
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Published:2008-10-03
Issue:10
Volume:16
Page:917-921
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Bouvier Julien,Bremond Georges,Vandelle Benoit,Brossard Florence,Dutartre Didier
Abstract
Photoluminescence of strained Si1-x-yGexCy alloy layer and Si1-x-yGexCy /Si1-xGex structures selectively grown by RT-CVD is investigated. Spectroscopic PL at low temperature (14K) and integrated PL at room temperature were performed. We report the effect of C atoms on SiGe photoluminescence spectra features, especially intensity ratio between the no-phonon (NP) and transverse-optical (TO) transitions. Using dedicated Si1-x-yGexCy /Si1-xGex structures, influence on SiGe PL spectra of C atoms supposed in non-substitutional positions is reported.
Publisher
The Electrochemical Society